field effect transistors Datasheet PDF & Spec Matches
| field effect transistors Datasheet PDF & Spec |
field effect transistors Manufacturer |
RoHS | Pb Free | field effect transistors Distributors |
Cross |
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N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 4 to 10 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <5 V; VDSmax: 25 V; YFS: 1 to 4 ms |
YES | FALSE | |||
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N-channel field-effect transistors - CRS: 1.5 pF; IDSS: 1 to 5 mA; IG: 5 mA; Kind: Low level general purpose amplifiers ; -V(P)GS: <2.5 V; VDSmax: 25 V; YFS: 1.5 to 4.5 ms |
YES | FALSE | |||
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 3 to 7 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.5 to 7.5 V; VDSmax: 30 V; YFS: 4.5 ms |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 1.5 to 20 mA; IDSS max.: 20 mA; IDSS min.: 1.5 mA; IG: 50 mA; IG: 50 ; RDS(on): 300 Ohm; toff: 45 ns; toff: 45 ns; ton: 45 ns; ton: 45 ns; -V(P)GS: 0.8 to 2.25 V; -V(P)GS MAX: 2.25 V; -V(P)GS MIN: 0.8 V; VDSmax: 30 V |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 1.1 pF; IDSS: 6 to 15 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: <8 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
YES | FALSE | |||
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N-channel silicon junction field-effect transistors - CRS: 0.8 pF; IDSS: 6 to 15 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: 0.4 to7.5 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: typ. 3 pF; IDSS: 5 mA; IDSS min.: 5 mA; IG: 50 mA; RDS(on): 50 Ohm; toff: 35 ns; ton: typ. 13 ns; -V(P)GS: 1 to 5 V; V(P)GS: 1 V; V(P)GS: 5 V; VDSmax: 40 V |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: typ. 3 pF; IDSS: 2 mA; IDSS min.: 2 mA; IG: 50 mA; RDS(on): 100 Ohm; toff: 35 ns; ton: typ. 13 ns; -V(P)GS: 0.5 to 3 V; V(P)GS: 0.5 V; V(P)GS: 3 V; VDSmax: 40 V |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 1.1 pF; IDSS: 12 to 25 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: <8 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 1.1 pF; IDSS: 2 to 6.5 mA; IG: 10 mA; Kind: DC, LF and HF amplifiers ; -V(P)GS: <8 V; VDSmax: 30 V; YFS: 3 to 6.5 ms |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 7 to 70 mA; IDSS max.: 70 mA; IDSS min.: 7 mA; IG: 50 mA; IG: 50 ; RDS(on): 125 Ohm; toff: 30 ns; toff: 30 ns; ton: 15 ns; ton: 15 ns; -V(P)GS: 3 to 6 V; -V(P)GS MAX: 6 V; -V(P)GS MIN: 3 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 1.5 to 20 mA; IDSS max.: 20 mA; IDSS min.: 1.5 mA; IG: 50 mA; IG: 50 ; RDS(on): 300 Ohm; toff: 45 ns; toff: 45 ns; ton: 45 ns; ton: 45 ns; -V(P)GS: 0.8 to 2.25 V; -V(P)GS MAX: 2.25 V; -V(P)GS MIN: 0.8 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 20 to 135 mA; IDSS max.: 135 mA; IDSS min.: 20 mA; IG: 50 mA; IG: 50 ; RDS(on): 85 Ohm; toff: 15 ns; toff: 15 ns; ton: 7 ns; ton: 7 ns; -V(P)GS: 5 to 10 V; -V(P)GS MAX: 10 V; -V(P)GS MIN: 5 V; VDSmax: 30 V |
YES | FALSE | |||
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P-channel silicon field-effect transistors - CRS: 4 pF; CRS TYP: 4 pF; IDSS: 2 to 35 mA; IDSS max.: 35 mA; IDSS min.: 2 mA; IG: 50 mA; IG: 50 ; RDS(on): 250 Ohm; toff: 35 ns; toff: 35 ns; ton: 35 ns; ton: 35 ns; -V(P)GS: 1 to 4 V; -V(P)GS MAX: 4 V; -V(P)GS MIN: 1 V; VDSmax: 30 V |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 0.7 to 3 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 0.8 V; VDSmax: 20 V; YFS: 2.5 ms |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 2.5 to 7 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 1.5 V; VDSmax: 20 V; YFS: 4 ms |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 6 to 12 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 2.2 V; VDSmax: 20 V; YFS: 6 ms |
YES | FALSE | |||
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N-channel silicon field-effect transistors - CRS: 0.4 pF; IDSS: 10 to 18 mA; IG: 10 mA; Kind: RF stages FM portables, car radios, main radios and mixer stages ; -V(P)GS: typ. 3 V; VDSmax: 20 V; YFS: 7 ms |
YES | FALSE | |||
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