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The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET).
The growth of digital technologies like the microprocessor has provided the motivation to advance MOSFET technology faster than any other type of silicon-based transistor. The principal reason for the success of the MOSFET was the development of digital CMOS logic, which uses p- and n-channel MOSFETs as building blocks. The great advantage of CMOS logic is that they allow no current to flow (ideally), and thus no power to be consumed, except when the inputs to logic gates are being switched.
Over the past decades, the MOSFET has continually been scaled down in size; typical MOSFET channel lengths were once several micrometres, but modern integrated circuits are incorporating MOSFETs with channel lengths of less than a tenth of a micrometre. Indeed Intel began production of a process featuring a 65 nm feature size (with the channel being even shorter) in early 2006. Until the late 1990s, this size reduction resulted in great improvement to MOSFET operation with no deleterious consequences. Historically, the difficulties with decreasing the size of the MOSFET have been associated with the semiconductor device fabrication process.
Source: Wikipedia
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